Home White papers Overcoming the Challenges of Silicon Carbide to Ensure Application Success

Overcoming the Challenges of Silicon Carbide to Ensure Application Success

Overcoming the Challenges of Silicon Carbide to Ensure Application Success

Overcoming the Challenges of Silicon Carbide to Ensure Application Success

Topics Covered
  • SiC and the Opportunities it Enables
  • Challenges to Manufacturing SiC
  • The Ecosystem Around SiC
  • The onsemi SiC Process and its Advantages
  • 5 Steps Applied to Gate Oxide Integrity

White Paper Overview 

Silicon carbide (SiC) has emerged as the material that boasts some of the most attractive characteristics for high power conversion applications. These include traction inverters and on-board chargers in EVs, energy infrastructure applications such as DC fast charging, solar inverters, energy storage, and UPS.

This paper dives into the significance of SiC and the opportunities it enables across multiple markets. You’ll learn about wide bandgap material’s characteristics and its competitive advantages, and why SiC-based systems are typically more energy efficient, smaller, and generally more robust than silicon-based alternatives. 

Download this white paper to learn about why manufacturing SiC devices is challenging, and how onsemi takes a unique approach with its SiC manufacturing process and quality control methodology. Learn about the 5 steps onsemi applies to gate oxide integrity for SiC, and its detailed quality control elements to ensure reliable products are delivered to their customers. 

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