As power electronics continue to evolve, silicon carbide devices are driving new levels of efficiency, power density, and reliability across applications ranging from AI data centers and renewable energy to industrial automation and electric mobility. While SiC MOSFETs have become the mainstream choice, a new generation of normally-off SiC JFETs is emerging as a compelling alternative. This presentation explores the evolution of SiC power devices and explains why normally-off JFETs are gaining attention.