Next-Gen 650 V SiC MOSFETs Improve Performance for EV Applications

TOPICS COVERED

Overview of the M3S Advanced 650 V SiC MOSFET Technology
Key Performance Parameters and Figures of Merit
Comparison to Competitors and Previous Technology Generations
Performance Comparison for 3-Phase Totem Pole PFC Converter Designs

White Paper Overview

SiC MOSFETs offer advantages over silicon-based counterparts, including higher efficiency, reduced conduction and switching losses, and better thermal performance. The M3S technology, part of onsemi’s third-generation SiC MOSFETs, achieves lower specific on-resistance and superior switching performance compared to both previous onsemi generations and competitors. Advantages include:

31−42% lower switching energy losses
35% lower switching losses overall
Reduced capacitances
Faster switching
Lower recovery charge and energy

With the growing demand for power density, efficiency, and thermal performance in EV systems, the M3S technology addresses key industry challenges. Coupled with the comprehensive product portfolio, onsemi’s M3S MOSFETs offer a versatile and reliable solution for high-efficiency power conversion.

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