Webinar Overview

From generation to consumption, every stage of energy conversion presents unique measurement challenges. As the demand for efficient energy transmission continues to rise, advanced semiconductor materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have emerged as powerful solutions — offering higher switching frequencies, lower power losses, and greater performance. Yet, these innovations also bring new measurement complexities.

In this session, you’ll gain practical knowledge on how to characterize transistor switching circuits in WBG power systems — including high-side current and voltage measurements — and learn proven techniques to ensure accurate, reliable results.

Key takeaways include:

• How to select differential high-voltage probes with the bandwidth and common-mode rejection needed for precise gate-source and shunt-current measurements.
• Techniques for de-skewing voltage and current probes to ensure accurate time alignment and trustworthy dynamic-power calculations.
• Methods to recognize and mitigate parasitic effects such as ringing, overshoot, and waveform distortions.
• Best practices for turning complex measurement setups into clean, reliable, and repeatable data for your wide-bandgap power designs.