When Planar is Superior to Trench: An In-Depth Look at the Continued Evolution of Silicon Carbide MOSFETs

When Planar is Superior to Trench: An In−Depth Look at the Continued Evolution of Silicon Carbide MOSFETs

Topics Covered

Key Differences Between Planar and Trench Technologies
Critical Characteristics for Power Applications
Planar’s Advantages Today
Planning for The Trench Future

White Paper Overview

Did you know that planar SiC MOSFETs are built on decades of global manufacturing experience at onsemi and across the industry? That means planar provides superior performance, stability, and reliability over alternatives. Planar SiC manufacturing has been continually refined to deliver optimal results. Trench technology has been used in legacy silicon-based devices and it is believed that trench technology is the only way to get optimal power density.

SiC trench MOSFET technology will likely reach that point eventually, but it remains relatively new and has limited long−term deployment in the real world. Learn why onsemi’s
proven M3e SiC planar MOSFET technology surpasses currently available trench technology and deliver benefits of trench. In addition, discover how onsemi is committed to investing in both trench and planar SiC processes and products, ensuring that you can confidently partner with an industry leader that is ready for the future.

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